2N3799 |
RFQ for 2N3799 |
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| Product | Manufacturers | Pack | D/C |
| 2N3799 | - | CAN3 | - |

Typical Application |
Features |
| • Low Level Amplifier• Instrumentation Amplifiers• General Purpose | • SILICON PLANAR EPITAXIAL PNP TRANSISTOR• CECC SCREENING OPTIONS• LOW NOISE AMPLIFIER |
|
VCBO |
collector-base voltage |
60V |
|
VCEO |
collector-emitter voltage(IB = 0) |
60V |
|
VEBO |
emitter-base voltage(IB = 0) |
5V |
|
IC |
Collector Current |
50mA |
|
PD |
Total Device Dissipation @ TA = 25°C Derate above 25°C |
360mW |
|
2.06mW / °C | ||
|
PD |
Total Device Dissipation @ TC = 25°C Derate above 25°C. |
1.2W |
|
6.86mW / °C | ||
|
Tj,Tstg |
Storage Temperature |
65 to +200°C |
|
RJA |
Thermal Resistance Junction to Ambient |
0.49°C/mW |
|
RJC |
Thermal Resistance Junction to Case |
0.15°C/mW |